elektronische bauelemente 2SD1819A 0.1a , 60v npn plastic-encapsulate transistor 24 24 -feb-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 1 base 2 emitter col lector 3 rohs compliant product a suffix of -c specifies halogen & lead-free fea tures high dc current gain. low collector to emitter saturation voltage v ce(sat) . complementary to 2sb1218a app lication general purpose amplification. cl a ssification of h fe product-rank 2sd1 819a-q 2SD1819A-r 2SD1819A-s range 160~260 210~340 290~460 marking zq zr zs package information package mpq leadersize sot-323 3k 7 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter sy m bol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 7 v collector current i c 100 ma collector power dissipation p c 150 mw thermal resistance from junction to ambient r ja 833 c / w junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter sym bol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 60 - - v i c =1 0 a, i e =0 collector-emitter breakdown voltage v (br)ceo 50 - - v i c =2 ma, i b =0 emitter-base breakdown voltage v (br)ebo 7 - - v i e =1 0 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb = 20v, i e =0 base cut-off current i ceo - - 100 a v ce = 10v, i b =0 emitter cut-off current i ebo - - 0.1 a v eb = 7v, i c =0 h fe (1) 160 - 460 v ce =10v, i c =2ma dc current gain h fe (2) 90 - - v ce =2v, i c =100ma collector-emitter saturation voltage v ce(sat) - - 0.3 v i c =100ma, i b =10ma transition frequency f t - 150 - mhz v ce =10v, i c =2ma, f=200mhz collector output capacitance c ob - 3.5 - pf v cb =10v, i e =0, f=1mhz sot-323 millimeter mi l limeter ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
elektronische bauelemente 2SD1819A 0.1a , 60v npn plastic-encapsulate transistor 24 - feb-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. cha r acteristic curves
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